MRF19125 RF Power Field Effect Transistors 1930 to1990 MHz 125W

Description

Part No.
:     MRF19125     MRF19125R3
Description  :
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
1930 - 1990MHz  ，  125W  , 26V
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,
IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power ó 24 Watts Avg.
Power Gain ó 13.6 dB
Efficiency ó 22%
ACPR ó -51 dB
IM3 ó -37.0 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
Maker： MOTOROLA [Motorola, Inc]
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